Nouvelle approche de modélisation des transistors micro-ondes MESFET et HEMT

Abstract

The authors present an analytical model of current drain–source based on the one established by Chalmers. As the precision of parameters is directly bound to the measured maximal value of the transconductance, a precision level of 25 % is obtained. To improve this precision, the combined optimization algorithm with the Chalmers model is elaborated. The results obtained are very satisfactory. For a mathematical function ψ, with three terms in the saturated region, the influence of the temperature represents correctly the drain current for the voltage near a pinch-off voltage.