Electrical characterization of n-InP grown by metal-organic vapour-phase epitaxy
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Published:1987-08-01
Issue:8
Volume:65
Page:846-849
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ISSN:0008-4204
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Container-title:Canadian Journal of Physics
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language:en
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Short-container-title:Can. J. Phys.
Author:
Benzaquen M.,Walsh D.,Mazaruk K.,Weissfloch P.,Puetz N.,Miner C.
Abstract
At room-temperature, the Hall mobility observed in epitaxic n-InP samples grown by metal-organic vapour-phase epitaxy is often lower than predicted, with a corresponding rise in the electronic concentration. These effects are attributed to the presence of a residual deep donor center that both acts as a strong scatterer and provides the additional electronic excitation observed at high temperature as it ionizes. A binding energy of 215 meV is consistent with both electrical-transport measurements and the observed photoluminescence.
Publisher
Canadian Science Publishing
Subject
General Physics and Astronomy