THE EFFECT OF MAGNETIC ELEMENT IMPURITIES ON THE RESISTIVITY OF SEMICONDUCTORS

Abstract

A theoretical analysis of the effect of magnetic element impurities on the resistivity of semiconductors is discussed. The theory of Kondo has been suitably modified. The important processes consist of third-order terms in perturbation theory which correspond to two spin-flip exchange processes followed or preceded by one Coulomb or exchange process without spin flip. This leads to a simple result ρ = aT3/2 – cbT7/2, where the first term refers to the ordinary phonon scattering and the second one to the spin-dependent scattering.