Generalized valence bond study of rotational singlet structures and pi bond energies for systems containing C==C, Si==Si, and C==Si double bonds

Abstract

Ab initio GVB(6/12)/6-31G** calculations were performed on A2X==YB2 (A, B = H, F; X, Y = C, Si) to obtain the optimized geometries for planar and twisted singlet structures, and to also calculate pi bond energies (rotational barriers). The nature of C-C, Si-Si, and C-Si pi bonds has been investigated. The results show that the C-C pi bond energy (E pi (ethene) = 65.4 kcal/mol) decreases with increasing fluorine substitution. The pyramidalization at the carbon or silicon center for the twisted structures decreases the pi bond energies in the substituted ethenes and their silicon counterparts. The Si-Si (E pi (disilene) = 23.2 kcal/mol) and C-Si (E pi (silaethene) = 31.6 kcal/mol) pi bonds become much weaker. Fluorine substitution stabilizes both the diradical and the dipolar twisted singlet structures.Key words: pi bond energy, ab initio calculations, generalized valence bond, fluorine substitution, disilene, and silaethene.