Author:
Mathur M. S.,Derenchuk V. P.,McKee J. S. C.
Abstract
The surface of a P-type Si wafer was bombarded with [Formula: see text] and then [Formula: see text], and the Raman spectrum of the implanted surface was obtained. The recorded Raman spectrum not only confirms the formation of various silicon–oxygen, silicon–nitrogen, and silicon–oxygen–nitrogen complexes, but enables the identification of other ones.
Publisher
Canadian Science Publishing
Subject
General Physics and Astronomy
Cited by
10 articles.
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1. Laboratory based space experiments using an ion implanter;Vacuum;1993-03
2. Effect of nitrogen ion bombardment on dielectric surface breakdown;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1992-03
3. Hydrogen ion interaction behaviour of plasma-sprayed TiC coatings;Surface and Coatings Technology;1991-12
4. Investigation and characterization of space materials;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1991-05
5. Molecular complexes on implanted surfaces: unenhanced surface Raman study;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1991-04