The preparation and passive annealing of Cd3As2 platelets

Abstract

Single crystals of Cd3As2 have been grown from the vapour phase using hydrogen gas and then annealed under vacuum at 425 °C. The anneal of thin samples always causes the Fermi energy to rise to 0.25 eV (n ~ 3.3 × 1018/cm3). The latter then decreases at a rate of 1.5–5 meV/week to 0.052 eV(n ~ 1.5 × 1017/cm3) or lower.