Author:
Clark W. R.,Champness C. H.
Abstract
It has been known for some time in pn junctions and Schottky junctions that inductance can arise at low frequency in high-level injection owing to conductivity modulation and the transit time of injected carriers. Several observations of this type of inductive behaviour have been reported. In the present work, an inductive effect was observed in forward-biased selenium–thallium contacts at frequencies generally below 1 kHz. The effect was found to vary with storage time and may arise from the formation of semiconducting TISe between the selenium and the thallium.
Publisher
Canadian Science Publishing
Subject
General Physics and Astronomy
Cited by
3 articles.
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