The sulfur-passivated InP surface

Abstract

The passivation of the InP surface by sulfur treatment is studied in the temperature range between 150–300 °C by angle resolved X-ray photoelectron spectroscopy and photoluminescence measurements. The thermal sulfurization results in a 30 Å (1 Å = 10−10 m) overlayer of In2S3 and P2O5. This cap layer lowers the phosphorus escape rate from the substrate thereby reducing the defects associated with phosphorus vacancies.