Author:
Dubowski J. J.,Mitchell D. F.,Sproule G. I.
Abstract
Pulsed-laser evaporated CdTe films deposited on (100) GaAs substrates have been studied by Auger electron spectroscopy (AES). The depth dependence of chemical composition has been determined from sputtering profiles. The films had a constant chemical composition within the accuracy of AES. Thermal treatment of GaAs substrate at temperatures as low as 260 °C was found to be sufficient for obtaining and O- and C-free post-growth surface of GaAs. The width of the interfacial CdTe–GaAs region was ≤ 3 nm, and the interface was Te-rich. A possibility of forming the As2Te3 layer at the CdTe–GaAs interface has been demonstrated.
Publisher
Canadian Science Publishing
Subject
General Physics and Astronomy
Cited by
6 articles.
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