Photocorrosion of hydrogenated amorphous silicon: effect of the solvent
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Published:1989-10-01
Issue:10
Volume:67
Page:980-983
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ISSN:0008-4204
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Container-title:Canadian Journal of Physics
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language:en
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Short-container-title:Can. J. Phys.
Author:
Savadogo O.,Yelon A.
Abstract
The photocorrosion of amorphous hydrogenated silicon (a-Si:H) in different solvents was studied. Impedance measurements were performed under potentiostatic conditions. At each potential, the impedance Z(ω, V) was determined in the frequency range 5 Hz–100 kHz. The Z(ω, V) diagrams were analyzed and the corrosion sensitivity of the material in different electrolytes was determined. A correlation between electroactivity domain and ac impedance curves is proposed. A relationship is used to describe the anodic corrosion process in different solvents. The electrolyte that shows no oxide growth at the semiconductor – electrolyte interface was deduced.
Publisher
Canadian Science Publishing
Subject
General Physics and Astronomy