Creation of a pn heterojunction in Hg1−xCdxTe (x ≈ 0.2) by laser annealing

Abstract

A highly photosensitive diode area was created in solid solutions of Hg1−xCdxTe (x ≈ m 0.2) (MCT) without melting its surface. The idea of the possible formation of pn heterojunctions, which was indicated by computer modelling of the mass transportation processes under laser treatment of the MCT, was experimentally realized. MCT samples were irradiated with an Nd:YAG laser having an energy density of 0.7 J cm−2. The presence of a heterojunction on a surface not far below the upper surface has been verified by photovoltaic measurements and X-ray microanalysis as well as by current–voltage characteristics.