Author:
Day D. J.,Trudeau M.,McAlister S. P.,Hurd C. M.
Abstract
GaAs metal-semiconductor field-effect transistor devices grown on semi-insulating substrates are shown to display noise spectra with a f−3/2 high-frequency roll-off. This is interpreted as diffusion noise from generation-recombination events at traps in the semi-insulating substrate. This interpretation is confirmed by the instabilities and oscillations that occur when the devices are operated under a large drain bias.
Publisher
Canadian Science Publishing
Subject
General Physics and Astronomy
Cited by
8 articles.
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