Preparation and Properties of Amorphous Tl2SexTe1−x Films

Abstract

Films of amorphous Tl2SexTe1−x, with x values of 0, 0.25, 0.5, 0.75, and 1, have been prepared by flash evaporation of mixed powders of Tl2Se and Tl2Te. These films show thermally activated conduction with up to four distinct activation energies, in different temperature ranges, as the samples are warmed from their liquid-nitrogen growth temperature; they then undergo spontaneous recrystallization at temperatures near 300 K. The low-temperature conduction in these samples is consistent with the model of amorphous semiconductors proposed by Davis and Mott, and the compositional dependence of the parameters of this model are presented and discussed.