Author:
Roth A. P.,Keeler W. J.,Fortin E.
Abstract
The temperature dependence of the direct energy gap Eg in the In1−xGaxSb alloy system has been measured from 6 to 300 K using the photovoltaic effect as a tool of study. The temperature coefficients of Eg in the alloy were related in a simple way to those of the parent binary compounds. It is shown in particular that the bowing parameter in the Eg(x) equation varied very little between 6 and 300 K.
Publisher
Canadian Science Publishing
Subject
General Physics and Astronomy
Cited by
19 articles.
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