Effect of temperature on the binding energy of a shallow hydrogenic impurity in a quantum well wire

Abstract

In this work, we investigate the variation of the binding energy of an on-axis hydrogenic impurity in a cylindrical semiconductor GaAsalxGa1–xAs quantum well wire (QWW) with temperature, by taking into account the temperature dependance of the electron masses and dielectric constants in the quantum well and potential barrier region as well as the temperature dependence of the barrier height. This investigation is important in understanding the role such impurities can play in determining the transport properties of such systems. The results show enhancement of the binding energy as the temperature is decreased, specially for small values of wire radius.