Abstract
The photoluminescence spectrum of heavily doped Si(P) has been studied as a function of temperature, excitation level, and impurity concentration. Several new results are observed for the first time, which include: (i) a narrowing of the impurity band luminescence peak when the temperature is increased to about T = 15 K, (ii) a sudden disappearance of the impurity band emission at a certain temperature determined by the dopant concentration, and (iii) an excitation threshold behaviour for the luminescence observed at high excitation level.A new model is introduced to explain the data. In this model, the impurity band undergoes a localized-to-delocalized transition due to a sufficiently large concentration of photocreated carriers.
Publisher
Canadian Science Publishing
Subject
General Physics and Astronomy
Cited by
17 articles.
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