Author:
Nathan A.,Huiser A. M. J.,Baltes H. P.,Schmidt-Weinmar H. G.
Abstract
The two-dimensional distributions of the potential, current, and surface charge for a magnetic-field-sensitive N-channel MOSFET have been computed numerically. The MOSFET is operated in the linear region and is based on a triple-drain configuration. The sensitivity as well as the signal-to-noise ratio is studied for a variety of channel geometries, and an optimal device geometry is presented.
Publisher
Canadian Science Publishing
Subject
General Physics and Astronomy
Cited by
5 articles.
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