The 4d–4p transitions and soft X-ray laser wavelengths in Si-like ions

Author:

El-Maaref A. Abou1,Uosif M.A.M.1,Allam S.H.2,El-Sherbini Th.M.2

Affiliation:

1. Physics Department, Faculty of Science, Al-Azhar University, Assuit, Egypt.

2. Laboratory of Lasers and New Materials, Physics Department, Faculty of Science, Cairo University, Giza, Egypt.

Abstract

The transitions between 4p and 4d levels have been studied to examine the possibility of laser wavelength production in the soft X-ray region. The oscillator strengths of the transitions 3p4p (3S,3P,3D) → 3p4d (3Po,3Do,3Fo) have been calculated using CIV3 code. Using calculated oscillator strengths, the excitation rate coefficients, reduced populations, and gain coefficients for Si-like Ni XV, Zn XVII, Ga XVIII, Ge XIX, and As XX at electron temperatures 1/4, 1/2, and 3/4 the ionization potential have been calculated. The method by Palumbo and Elton has been used in the calculation of laser parameters. The present calculated data show promising values for the production of laser wavelengths in the soft X-ray region. The maximum values of the gain factor lie within the range α ∼ 109 cm−1 and wavelength λ ≤ 469 Å.

Publisher

Canadian Science Publishing

Subject

General Physics and Astronomy

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