Electronic properties of undoped microcrystalline silicon oxide films

Author:

Reynolds Steve1,Michard Stephan2,Wang Shuo23,Smirnov Vladimir2

Affiliation:

1. Division of Physics, University of Dundee, Nethergate, Dundee DD1 4HN, UK.

2. IEK-5 Photovoltaik, Forschungszentrum Jülich, D-52425 Jülich, Germany.

3. Institute of Photo-electronic Thin Film Device and Technique, Nankai University, Tianjin 300071, People’s Republic of China.

Abstract

The electronic properties of undoped microcrystalline silicon oxide films have been investigated by transient photocurrent (TPC) density of states (DOS) spectroscopy, supported by dark conductivity, steady-state photoconductivity, and constant-photocurrent measurements (CPM). Film compositions span the range from amorphous to microcrystalline and contain up to 10% oxygen content, yielding optical bandgap values E04 (the photon energy at which the absorption depth equals one micrometre) between 1.85 and 2.11 eV. Carrier transport is consistent with multiple-trapping in a localised DOS, which depends upon film structure and oxygen content. TPC measurements indicate that both conduction band-tail energy and deep defect density increase with increasing oxygen content, accompanied by a reduction in majority carrier mobility-lifetime product. CPM measurements on amorphous films show a broadening of the Urbach tail with increasing oxygen content. Significantly higher oxygen incorporation without seriously compromising electronic quality appears possible in microcrystalline films. This suggests potential application as solar cell absorber layers offering increased optical bandgap and open-circuit voltage.

Publisher

Canadian Science Publishing

Subject

General Physics and Astronomy

Cited by 1 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Effects of oxygen incorporation in solar cells with a-SiOx:H absorber layer;Japanese Journal of Applied Physics;2014-12-03

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