Preparation condition and recombination rates at radiative defects in a-Si:H-Reference-Cited by-同舟云学术

Preparation condition and recombination rates at radiative defects in a-Si:H

Published:2014-07 Issue:7/8 Volume:92 Page:561-564
ISSN:0008-4204
Container-title:Canadian Journal of Physics
language:en
Short-container-title:Can. J. Phys.

Author:

Ogihara Chisato¹,Shintoku Yuta¹,Yamaguchi Kei¹,Morigaki Kazuo²

Affiliation:

1. Department of Applied Science, Yamaguchi University, Ube 755-8611, Japan.

2. Department of Electrical-System Engineering, Hiroshima Institute of Technology, Miyake, Saeki-ku, Hiroshima 731-5193, Japan.

Abstract

Recombination rates at radiative defects in the hydrogenated amorphous silicon films prepared at various preparation conditions, estimated from intensities and characteristic lifetimes of defect photoluminescence, have been investigated. The temperature variations of the radiative recombination rate are discussed in terms of a model in which the increase of the radiative recombination rate is attributed to the thermal excitation of the holes from deep and strongly localised tail states to shallow and more extended tail states. The temperature variations of nonradiative recombination rate are discussed in terms of a theory for the case of strong electron–phonon coupling.

Publisher

Canadian Science Publishing

Subject

General Physics and Astronomy

Link

http://www.nrcresearchpress.com/doi/pdf/10.1139/cjp-2013-0538

Reference8 articles.

1. K. Morigaki. Physics of Amorphous Semiconductors. World Scientific Publ., Singapore. 1999.

2. Light‐induced radiative recombination centers in hydrogenated amorphous silicon

3. Temperature variation of radiative recombination rate of electron-hole pairs responsible for defect photoluminescence in a-Si:H

4. Thermal quenching of defect photoluminescence and recombination rates of electron–hole pairs in a-Si:H

5. Temperature variation of non-radiative recombination rate in a-Si:H films