Electron effective mass values in GaAsxSb1−x alloys

Abstract

Measurements of Faraday rotation and of infra-red plasma reflectance have been made at room temperature on n-type polycrystalline samples of GaASxSb1−x alloys. Hence effective mass values m00* for the bottom of the (000) conduction band have been determined. The experimental variation of m00* with x is compared with the predictions of various models, viz., (a) a simple Kane model, (b) the model proposed by Berolo et al., and (c) the model proposed by Hermann and Weisbuch. It is found that the model of Berolo et al. gives the best fit to the experimental data.