Anomalous effects of planar Hall voltage and magnetoresistance of m3m group (n-PbS, n-Ge, and n-Si cubic crystals) at different temperatures

Abstract

The planar magnetoresistance (PMR) and planar Hall voltage (PUH), of n-PbS, n-Ge, and n-Si forming m3m-group cubic crystals, were measured under weak electric and magnetic fields at different temperatures. Measurements were taken of the different angles (ϕ) of deviation of the current vector from the different crystallographic axes. The samples were doped with the same impurity concentration (1.2 × 1017 cm−3). Many types of anomalous effects of PMR and PUH were observed when the direction of magnetic field (B) was reversed. It was found that the positive and negative PMR and PUH are strongly dependent on the direction of weak B. This shows that the behaviours of PMR and PUH are dependent upon the angle of deviation of the current from the axis of symmetry with respect to the type of orientation of the sample. The contributions of PUH and PMR were calculated at different temperatures and values of ϕ. It is very clear that the anomalous terms of PUH and PMR are in good agreement with B1. The experimental data are illustrated and the results are discussed.