THE ELECTRICAL CONDUCTIVITY OF MANGANESE ARSENIDE AND ANTIMONIDE

Abstract

New measurements of the electrical resistivity of MnAs and MnSb are reported as part of a program of relating the electronic and crystal structure of compounds to their electrical properties. Modern experimental methods have been used in an attempt to obtain better samples and to avoid the formation of cracks which greatly influence the measured resistivity. The electrical resistivity of MnAs in the paramagnetic range where it is fairly independent of temperature is about 5 × 10−4 ohm cm. In the ferromagnetic range it is about 2 × 10−4 ohm cm at 0 °C with a temperature coefficient of 5 × 10−3 per °C.