MOS (Metal Oxide Semiconductor) Physics and Technology
Author:
Publisher
Informa UK Limited
Subject
Condensed Matter Physics,Nuclear Energy and Engineering,Nuclear and High Energy Physics
Link
https://www.tandfonline.com/doi/pdf/10.13182/NT86-A33811
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Effect of annealing temperature on the electrical characteristics of Al/Er2O3/n-Si/Al MOS capacitors;Journal of Alloys and Compounds;2021-05
2. Synthesis and properties of hydrogenated aluminum thin film by reactive sputtering;Thin Solid Films;2020-09
3. Determination of frequency and voltage dependence of electrical properties of Al/(Er2O3/SiO2/n-Si)/Al MOS capacitor;Journal of Materials Science: Materials in Electronics;2020-04-28
4. High sensitivity organic inorganic hybrid X-ray detectors with direct transduction and broadband response;Nature Communications;2018-07-26
5. Laterally inhomogeneous barrier analysis of cu/n-gap/al schottky devices;Journal of Physics: Conference Series;2016-04
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