Double-state Lasing from Semiconductor Quantum Dot Laser Diodes Caused by Slow Carrier Relaxation
Author:
Publisher
Korean Physical Society
Subject
General Physics and Astronomy
Cited by 16 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Two-State Lasing in Microdisk Laser Diodes with Quantum Dot Active Region;Photonics;2023-02-21
2. Quantum-dot microlasers based on whispering gallery mode resonators;Light: Science & Applications;2021-04-15
3. Intensity noise behavior of an InAs/InGaAs quantum dot laser emitting on ground states and excited states;Optics Letters;2018-02-14
4. Influence of modulation p-doping level on multi-state lasing in InAs/InGaAs quantum dot lasers having different external loss;Advanced Photonics 2018 (BGPP, IPR, NP, NOMA, Sensors, Networks, SPPCom, SOF);2018
5. The effect ofp-doping on multi-state lasing in InAs/InGaAs quantum dot lasers for different cavity lengths;Journal of Physics: Conference Series;2017-11
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