Effect of surface passivation on breakdown voltages of 4H-SiC Schottky barrier diodes-Reference-Cited by-同舟云学术

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Effect of surface passivation on breakdown voltages of 4H-SiC Schottky barrier diodes

Published:2017-07-18 Issue:10 Volume:71 Page:707-710
ISSN:0374-4884
Container-title:Journal of the Korean Physical Society
language:en
Short-container-title:J. Korean Phys. Soc.

Author:

Kang In Ho,Na Moon Kyong,Seok Ogyun,Moon Jeong Hyun,Kim H. W.,Kim Sang Cheol,Bahng Wook,Kim Nam Kyun,Park Him-Chan,Yang Chang Heon

Publisher

Korean Physical Society

Subject

General Physics and Astronomy

Link

http://link.springer.com/article/10.3938/jkps.71.707/fulltext.html

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Design and Fabrication of 1.2 kV/10A 4H-SiC Junction Barrier Schottky Diodes with High Current Density;Transactions on Electrical and Electronic Materials;2021-02-19

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