? Electric Properties of PVDF-TrFE (75/25) thin film with Lanthanum Zirconium Oxide Buffer Layer for FeRAM-Reference-Cited by-同舟云学术

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? Electric Properties of PVDF-TrFE (75/25) thin film with Lanthanum Zirconium Oxide Buffer Layer for FeRAM

Published:2009-08-14 Issue:2(1) Volume:55 Page:898-901
ISSN:0374-4884
Container-title:Journal of the Korean Physical Society
language:en
Short-container-title:J. Korean Phy. Soc.

Author:

Han Hui Seong,Jeon Ho Seung,Lee Gwang Geun,Kim Kwi Jung,Park Byung Eun

Publisher

Korean Physical Society

Subject

General Physics and Astronomy

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Electrical properties of metal-ferroelectric-insulator-semiconductor field effect transistors (MFIS-FETs) using the polyvinylidene fluoride-trifluoroethylene (P(VDF-TrFE))/ZrO2/Si structure;Journal of the Ceramic Society of Japan;2010

2. Top-gate ferroelectric thin-film-transistors with P(VDF-TrFE) copolymer;Current Applied Physics;2010-01

3. Organic ferroelectric field-effect transistor with P(VDF-TrFE)/PMMA blend thin films for non-volatile memory applications;Current Applied Physics;2010-01

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