Velocity Overshoot and Its Degradation in Sub-50-nm Gate-length GaAs/AlGaAs High-electron-mobility Transistors
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Published:2009-07-15
Issue:1
Volume:55
Page:38-41
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ISSN:0374-4884
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Container-title:Journal of the Korean Physical Society
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language:en
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Short-container-title:J. Korean Phy. Soc.
Publisher
Korean Physical Society
Subject
General Physics and Astronomy