In/ITO Ohmic Contacts to Ga-face and N-face n-GaN for InGaN-basedLight-emitting Diodes-Reference-Cited by-同舟云学术

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In/ITO Ohmic Contacts to Ga-face and N-face n-GaN for InGaN-basedLight-emitting Diodes

Published:2009-07-15 Issue:1 Volume:55 Page:318-321
ISSN:0374-4884
Container-title:Journal of the Korean Physical Society
language:en
Short-container-title:J. Korean Phy. Soc.

Author:

Kang KiMan,Jo J.M.,Kwak JoonSeop,Kim Hyunsoo,Kim Y.S.,Sone C.,Park Y.

Publisher

Korean Physical Society

Subject

General Physics and Astronomy

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Low‐Resistivity Ti/Al/TiN/Au Ohmic Contacts to Ga‐ and N‐Face n‐GaN for Vertical Power Devices;physica status solidi (a);2024-04-17

2. Design of highly transparent ohmic contact to N face n-GaN for enhancing light extraction in GaN-based micro LED display;Optics Express;2023-11-27

3. Multiple Shapes Micro‐LEDs with Defect Free Sidewalls and Simple Liftoff and Transfer Using Selective Area Growth on Hexagonal Boron Nitride Template;Advanced Materials Technologies;2023-04-14

4. Indium Tin Oxide (ITO) based Ohmic Contacts on Bulk n-GaN Substrate;ECS Journal of Solid State Science and Technology;2022-11-01

5. Thermally grown indium (In) thin-film for creating ohmic contact and In-bumps for HgCdTe-based IR detectors;Applied Surface Science;2022-09

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