A model for the InGaAs/InP single photon avalanche diodes with multiple-quantum wells in the charge multiplication region-Reference-Cited by-同舟云学术

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A model for the InGaAs/InP single photon avalanche diodes with multiple-quantum wells in the charge multiplication region

Published:2018-01 Issue:2 Volume:72 Page:289-293
ISSN:0374-4884
Container-title:Journal of the Korean Physical Society
language:en
Short-container-title:Journal of the Korean Physical Society

Author:

Seo H. S.,Park S. H.,Kwak S.,Ahn D.

Publisher

Korean Physical Society

Subject

General Physics and Astronomy

Link

http://link.springer.com/article/10.3938/jkps.72.289/fulltext.html

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1. Analysis and Design of STI-bounded Single Photon Avalanche Diode with Low Breakdown Voltage;2021 International Conference on Electronic Information Technology and Smart Agriculture (ICEITSA);2021-12

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