Operational stability of solution-processed indium-oxide thin-film transistors: Environmental condition and electrical stress-Reference-Cited by-同舟云学术

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Operational stability of solution-processed indium-oxide thin-film transistors: Environmental condition and electrical stress

Published:2018-01 Issue:1 Volume:72 Page:151-158
ISSN:0374-4884
Container-title:Journal of the Korean Physical Society
language:en
Short-container-title:Journal of the Korean Physical Society

Author:

Baang Sungkeun,Lee Hyeonju,Zhang Xue,Park Jaehoon,Kim Won-Pyo,Ko Young-Woong,Piao Shang Hao,Choi Hyoung Jin,Kwon Jin-Hyuk,Bae Jin-Hyuk

Publisher

Korean Physical Society

Subject

General Physics and Astronomy

Link

http://link.springer.com/content/pdf/10.3938/jkps.72.151.pdf

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Direct integration of piezoactuator array with active-matrix oxide thin-film transistors using a low-temperature solution process;Sensors and Actuators A: Physical;2019-08

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