Contact and channel resistances of ballistic and non-ballistic carbon-nanotube field-effect transistors-Reference-Cited by-同舟云学术

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Contact and channel resistances of ballistic and non-ballistic carbon-nanotube field-effect transistors

Published:2016-01 Issue:2 Volume:68 Page:251-256
ISSN:0374-4884
Container-title:Journal of the Korean Physical Society
language:en
Short-container-title:Journal of the Korean Physical Society

Author:

Park Jong-Myeon,Hong Shin-Nam

Publisher

Korean Physical Society

Subject

General Physics and Astronomy

Link

http://link.springer.com/content/pdf/10.3938/jkps.68.251.pdf

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A review of the top of the barrier nanotransistor models for semiconductor nanomaterials;Superlattices and Microstructures;2020-04

2. Estudio en régimen DC y AC de diodos de nanotubos de carbono para aplicaciones de alta frecuencia;Científica;2019-12

3. Feasible Device Architectures for Ultrascaled CNTFETs;IEEE Transactions on Nanotechnology;2018-01

4. Impedance analysis and conduction mechanism of Ba doped Mn1.75Ni0.7Co0.5−x Cu0.05O4 NTC thermistors;Applied Physics A;2017-08-21

5. Investigation of Multiply Twins in Mn2.02Co0.98O4Ceramic by Means of Transmission Electron Microscopy;Journal of the American Ceramic Society;2016-06-24

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