Temperature dependence of the photovoltage from Franz-Keldysh oscillations in a GaAs p+-i-n+ structure
Author:
Publisher
Korean Physical Society
Subject
General Physics and Astronomy
Link
http://link.springer.com/content/pdf/10.3938/jkps.67.916.pdf
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Characterization of surface electric field in β-FeSi2 by Franz–Keldysh oscillations;Journal of Applied Physics;2024-05-28
2. Impact of Built‐In Electric Field on the Emission Characteristics of InAs/GaAs Quantum Dot Laser Structure;physica status solidi (b);2021-05-20
3. Investigation of the Carrier Movement through the Tunneling Junction in the InGaP/GaAs Dual Junction Solar Cell Using the Electrically and Optically Biased Photoreflectance Spectroscopy;Energies;2021-01-27
4. Observation and implications of the Franz‐Keldysh effect in ultrathin GaAs solar cells;Progress in Photovoltaics: Research and Applications;2020-05-03
5. Electro-optical properties of Cu2O for P excitons in the regime of Franz-Keldysh oscillations;Physical Review B;2018-04-19
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