Characteristics of a field plate connected to T-shaped gate in AlGaN/GaN HEMTs-Reference-Cited by-同舟云学术

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Characteristics of a field plate connected to T-shaped gate in AlGaN/GaN HEMTs

Published:2015-08 Issue:4 Volume:67 Page:682-686
ISSN:0374-4884
Container-title:Journal of the Korean Physical Society
language:en
Short-container-title:Journal of the Korean Physical Society

Author:

Cho Kyu Jun,Ahn Ho Kyun,Kim Sung Il,Kang Dong Min,Lee Jong Min,Min Byoung Gue,Lee Sang Heung,Kim Dong Yung,Yoon Hyung Sup,Kim Hae Cheon,Lee Kyung Ho,Ju Chul Won,Lim Jong Won,Kwon Yong Hwan,Nam Eun Soo

Publisher

Korean Physical Society

Subject

General Physics and Astronomy

Link

http://link.springer.com/content/pdf/10.3938/jkps.67.682.pdf

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. GaN-based power devices: Physics, reliability, and perspectives;Journal of Applied Physics;2021-11-14

2. Analysis of AlGaN/GaN HEMT and Its Operational Improvement Using a Grated Gate Field Plate;Journal of Electronic Materials;2021-08-16

3. Evaluation of a “Field Cage” for Electric Field Control in GaN-Based HEMTs That Extends the Scalability of Breakdown Into the kV Regime;IEEE Transactions on Electron Devices;2017-09

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