Effective multi-step Ge condensation process using intermittent SiO2 strip to obtain a high-Ge concentration and a thick Ge-on-insulator (GeOI) substrate for p-MOSFET-Reference-Cited by-同舟云学术

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Effective multi-step Ge condensation process using intermittent SiO2 strip to obtain a high-Ge concentration and a thick Ge-on-insulator (GeOI) substrate for p-MOSFET

Published:2013-02 Issue:3 Volume:62 Page:531-535
ISSN:0374-4884
Container-title:Journal of the Korean Physical Society
language:en
Short-container-title:Journal of the Korean Physical Society

Author:

Kim Tae-Hyun,Park Jea-Gun

Publisher

Korean Physical Society

Subject

General Physics and Astronomy

Link

http://link.springer.com/content/pdf/10.3938/jkps.62.531.pdf

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Simple Ge/Si bilayer junction-based doping-less tunnel field-effect transistor;Nanotechnology;2022-12-13

2. Two-step hydrogen-ion implantation annihilation of threading dislocation defects in strain-relaxed Si0.7Ge0.3;Journal of the Korean Physical Society;2021-11-30

3. Dislocation sink annihilating threading dislocations in strain-relaxed Si1−xGexlayer;Nanotechnology;2020-01-08

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