Properties of the Ultra-Thin Silicon-Oxynitride Films Deposited by Using Plasma-Assisted N2O Oxidation for Semiconductor Device Applications-Reference-Cited by-同舟云学术

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Properties of the Ultra-Thin Silicon-Oxynitride Films Deposited by Using Plasma-Assisted N2O Oxidation for Semiconductor Device Applications

Published:2007-09-15 Issue:3 Volume:51 Page:1096
ISSN:0374-4884
Container-title:Journal of the Korean Physical Society
language:en
Short-container-title:J. Korean Phys. Soc.

Author:

Hwang Sunghyun,Jung Sungwook,Jang Kyung-Soo,Lee Jeoung In,Park Hyungjun,Dhungel S. K.,Yi J.,Chung Ho-Kyoon,Choi Byong-Deog,Lee Ki-Young

Publisher

Korean Physical Society

Subject

General Physics and Astronomy

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Optimization of passivation layer on the front surface of N-type tunnel oxide passivated contact solar cells;Thin Solid Films;2024-09

2. The effect of gas composition on the properties of silicon oxynitride thin film prepared by low-pressure inductively coupled Ar/N2 plasma;Thin Solid Films;2023-01

3. Flash memory devices with metal floating gate/metal nanocrystals as the charge storage layer: A status review;Facta universitatis - series: Electronics and Energetics;2020

4. Annealing effects on SiOxNy thin films: Optical and morphological properties;Thin Solid Films;2016-10

5. High Quality of Ultra-Thin SiOxNyFilms Prepared in Nitrous Oxide Ambients Using Thermal Low-Pressure Oxynitridation;Materials and Manufacturing Processes;2014-07-31

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