Growth Temperature Dependence of TiO2 Thin Films Prepared by Using Plasma-Enhanced Atomic Layer Deposition Method
Author:
Publisher
Korean Physical Society
Subject
General Physics and Astronomy
Cited by 25 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. High-k Oxides on Hydrogenated-Diamond for Metal-Oxide-Semiconductor Field-Effect Transistors [Invited];2019 IEEE 32nd International Conference on Microelectronic Test Structures (ICMTS);2019-03
2. Influence of Deposition Parameters on the Structure of TiO2 Thin Films Prepared by Reactive Magnetron Sputtering Technique;Recent Advances in Technology Research and Education;2018-08-19
3. An Overview of High-k Oxides on Hydrogenated-Diamond for Metal-Oxide-Semiconductor Capacitors and Field-Effect Transistors;Sensors;2018-06-04
4. Frequency-Dependent Dielectric Parameters of Au/TiO2/n-Si (MIS) Structure;Silicon;2018-03-26
5. Cross-diffusion-induced subharmonic spatial resonances in a predator-prey system;Physical Review E;2018-01-29
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