Threshold Current Density of 1.3-m GaAsSb/GaInAs/GaAs Type-II Trilayer Quantum Well Lasers on GaAs Substrates
Author:
Publisher
Korean Physical Society
Subject
General Physics and Astronomy
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Optical Investigation of p-GaAs/i-GaN0.38yAs1-1.38ySby/n-GaAs Quantum Wells Emitters;Journal of Nanotechnology;2022-04-13
2. Photonic crystal LEDs - designing light extraction;Laser & Photonics Review;2009-04-30
3. Modulation-Doping Effect on the Linewidth Enhancement Factor of Type-II GaAsSb/GaAs Quantum-Well Lasers;Journal of the Korean Physical Society;2008-12-15
4. Optical Gain of Type-II 1.55-¥ìm GaAsSb/InGaNAs/GaAs Trilayer Quantum Wells;Journal of the Korean Physical Society;2008-10-15
5. Modulation Doping Effect in the Optical Gain of Type-II GaAsSb/GaAs Quantum-Well Structures;Journal of the Korean Physical Society;2008-04-15
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