Properties of Hetero-Structured Diode with n-Type ZnO and p-Type NiO-Reference-Cited by-同舟云学术

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Properties of Hetero-Structured Diode with n-Type ZnO and p-Type NiO

Published:2008-07-15 Issue:1 Volume:53 Page:446-450
ISSN:0374-4884
Container-title:Journal of the Korean Physical Society
language:en
Short-container-title:J. Korean Phy. Soc.

Author:

Jee Seung Hyun,Park Hoon,Kim Soo Ho,Lee Joo Won,Yoon Young Soo,Kang Chi Won,Kim Dong-Joo

Publisher

Korean Physical Society

Subject

General Physics and Astronomy

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of swift heavy ion irradiation on the electrical characteristics of oxide-based heterojunction;Metal Oxide Defects;2023

2. Improved UV Photodetection of Terbium-doped NiO thin films prepared by cost-effective nebulizer spray technique;Materials Science in Semiconductor Processing;2021-06

3. Oxide bipolar electronics: materials, devices and circuits;Journal of Physics D: Applied Physics;2016-04-20

4. Fabrication of p-NiO/n-ZnO heterojunction devices for ultraviolet photodetectors via thermal oxidation and hydrothermal growth processes;Journal of Materials Science: Materials in Electronics;2015-11-06

5. Effect of annealing atmosphere on the electrical properties of nickel oxide/zinc oxide p–n junction grown by sol–gel technique;Materials Science in Semiconductor Processing;2014-10

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