Electrical Characterization of ZnO Nano-Particles Embedded in a Polyimide for Application as a Nano-Floating Gate Memory
Author:
Publisher
Korean Physical Society
Subject
General Physics and Astronomy
Cited by 9 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Nonvolatile Memory Characteristics of WSi2 Nanocrystals Embedded in SiO2 Dielectrics;Journal of Nanoscience and Nanotechnology;2011-01-01
2. In2O3 Nanocrystal Memory with the Barrier Engineered Tunnel Layer;Journal of Nanoscience and Nanotechnology;2011-01-01
3. Nonvolatile memory devices based on polyimides bearing noncoplanar twisted biphenyl units containing carbazole and triphenylamine side-chain groups;Journal of Materials Chemistry;2011
4. Effect of Ag nanoparticles on resistive switching of polyfluorene based organic non-volatile memory devices;Journal of the Korean Physical Society;2010-01-15
5. Electrical properties of WSi2 nanocrystal memory with SiO2/Si3N4/SiO2 tunnel barriers;Current Applied Physics;2010-01
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