Temperature- and Bias-dependent Study of Photocurrent Spectroscopy in an InGaN Light-emitting Diode Operating near 400 nm-Reference-Cited by-同舟云学术

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Temperature- and Bias-dependent Study of Photocurrent Spectroscopy in an InGaN Light-emitting Diode Operating near 400 nm

Published:2010-10-15 Issue:4 Volume:57 Page:793-796
ISSN:0374-4884
Container-title:Journal of the Korean Physical Society
language:en
Short-container-title:J. Korean Phy. Soc.

Author:

Yee Kiju,Kim C. S.,Kim J. H.,Yee K. J.,Kwon H. K.,Lee H. S.,Park J. S.

Publisher

Korean Physical Society

Subject

General Physics and Astronomy

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Formation Mechanism of GaN Nanowires with Various Shapes on Si(111);Journal of the Korean Physical Society;2020-08

2. Precise determination of electron-affinity and band gap via optical response and optical spectra;Optik;2019-02

3. Localization landscape theory of disorder in semiconductors. II. Urbach tails of disordered quantum well layers;Physical Review B;2017-04-18

4. Effect of Aging on the Photoelectrical Properties of AlGaInP LEDs;IEEE Transactions on Electron Devices;2016-07

5. Temperature-Dependent Internal Quantum Efficiency of Blue High-Brightness Light-Emitting Diodes;IEEE Journal of Quantum Electronics;2014-11

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