Influence of ionizing radiation on the parameters of p-channel MOS transistors-Reference-Cited by-同舟云学术

Influence of ionizing radiation on the parameters of p-channel MOS transistors

Published:2023-01-02 Issue:4 Volume:67 Page:402-408
ISSN:2524-244X
Container-title:Proceedings of the National Academy of Sciences of Belarus, Physical-Technical Series
language:
Short-container-title:Vescì Akademìì navuk Belarusì. Seryâ fizika-tehničnyh navuk

Author:

Bogatyrev Yu. V.¹,Aharodnikau D. A.¹,Lastovsky S. B.¹,Ket’ko A. V.²,Krechko M. M.²,Shpakovsky S. V.²,Rubanov P. V.³,Protopopov G. A.⁴,Chubunov P. A.⁴

Affiliation:

1. Scientific-Practical Materials Research Centre of National Academy of Sciences of Belarus

2. Branch of STC “Belmikrosystems” OJSC “INTEGRAL” – Managing Company of the Holding “INTEGRAL

3. JSC “Russian Space Systems”

4. Branch of JSC “United Rocket and Space Corporation” – “Research Institute of Space Instrumentation”

Abstract

The results of experimental studies of the influence of gamma radiation Co60 on the basic parameters of silicon epitaxial-planar p-channel MOSFET transistors under different electrical modes are presented. Transistors were manufactured according to radiation-resistant DMOS technology with design standards of 1.4 μm. As a result of transistor studies, it was established that the values of all basic parameters after the radiation dose D = 106 rads (SiO2) in active electrical irradiation modes remained within the limits of the performance criteria; the parameter, most sensitive to influence of a dose of irradiation by gamma-quanta is the threshold voltage; in the passive electrical irradiation mode the transistor’s radiations resistance in all parameters corresponds to a dose of 2,8·106 rads (SiO2). A sufficiently high radiation resistance of the studied p-channel MOSFETs makes it possible to recommend them for use in aviation and space equipment. The different degrees of radiation degradation of the studied parameters during irradiation are due to their dependence either on the effects of ionization in the layers of sub-gate and insulating dielectrics, or structural damage in the bulk silicon of the transistor active regions. The high radiation resistance of the studied p-channel MOSFETs allows recommending them for use in aviation and space equipment.

Publisher

Publishing House Belorusskaya Nauka

Subject

Pharmacology (medical)

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