Temperature dependence of the band gap of AgIn7S11 single crystals-Reference-Cited by-同舟云学术

Temperature dependence of the band gap of AgIn7S11 single crystals

Published:2023-04-03 Issue:1 Volume:59 Page:81-86
ISSN:2524-2415
Container-title:Proceedings of the National Academy of Sciences of Belarus. Physics and Mathematics Series
language:
Short-container-title:Vescì Akademìì navuk Belarusì. Seryâ fizika-matematyčnyh navuk

Author:

Bodnar I. V.¹,Feshchanka A. A.¹,Khoroshko V. V.¹,Pavlovsky V. N.²,Svitenkov I. E.²,Yablonskii G. P.²

Affiliation:

1. Belarusian State University of Informatics and Radioelectronics

2. B. I. Stepanov Institute of Physics of the National Academy of Sciences of Belarus

Abstract

AgIn7S11 single crystals are herein grown by the vertical Bridgman method. The composition of the obtained single crystals is determined by X-ray microprobe analysis as well as the crystal structure – by X-ray diffraction analysis. It is shown that the obtained single crystals are crystallized in the cubic spinel structure. Using transmission spectra in the tem- perature range 10–320 K we determined the band gap of these single crystals and plotted its temperature dependence. This dependence is similar to that of the majority of semiconductor materials, namely, Eg increases with decreasing the tempera- ture. We showed the agreement of the calculated and experimental values.

Publisher

Publishing House Belorusskaya Nauka

Subject

Computational Theory and Mathematics,General Physics and Astronomy,General Mathematics

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