Tracking Hydrogen During Poly-Si/SiOx Contact Fabrication: An Infrared Spectroscopy Analysis of Si–H Bonds Configurations-Reference-Cited by-同舟云学术

Tracking Hydrogen During Poly-Si/SiOx Contact Fabrication: An Infrared Spectroscopy Analysis of Si–H Bonds Configurations

Published:2024-02-22 Issue: Volume:1 Page:
ISSN:2940-2123
Container-title:SiliconPV Conference Proceedings
language:
Short-container-title:SiliconPV Conf Proc

Author:

Bocquet Vincent^ORCID,Cabal Raphaël,Albaric Mickaël^ORCID,Rochat Nevine^ORCID,Ramos Raphaël^ORCID,Barnes Jean-Paul,Dubois Sébastien

Abstract

The hydrogenation step contributing to the high efficiencies (>25%) reached with poly-Si/SiOx passivated contacts solar cells is still poorly understood. In this study, Fourier transform infrared spectroscopy (FTIR) is used to follow the different bonding configurations of H during the fabrication process. The carrier lifetime degradation upon annealing is correlated to an important loss of Si–H bonds, from both the a‑Si:H film and the SiOx interfaces. The subsequent hydrogenation step results in the formation of a small number of Si–H bonds near the crystalline silicon c-Si/SiOx interface, associated with the low stretching mode (LSM) and correlated to a significant lifetime improvement. These bonds feature a preferential orientation, as shown by polarized measurements.

Publisher

TIB Open Publishing

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