Abstract
Transition metal oxide films (TMO) as passivating contacts with improved opto-electronic characteristics play an important role in improving the silicon solar cell device efficiency. In this report, the effect of sputtering power on the optical properties of MoOx and the quality of MoOx/n-Si interface for its application in a silicon solar cell as carrier selective contacts has been reported. The optical transmittance of the film greater than 80 % in the visible and near infrared region of the spectrum is observed, which further improved with sputtering power. The creation of oxygen ion vacancies, which acts as positively charged structural defects able to capture one or two electrons led to the decrease of optical band gap from 3.70 eV to 3.23 eV at higher power. The oxygen vacancies occupied by electrons acts as donor centers, which lies close to the valence band, were responsible for modulation in electrical properties. The electrical properties of MoOx/n-Si interface was analyzed using current-voltage (I-V) measurements for its application as selective contact. A significant change in the selectivity parameters, like barrier height, I0 and series resistance of MoOx, has been observed with dc power. These extracted parameters showed that the sputtering power has a great influence on the selectivity of the charge carriers.