Temperature-Dependent Optical Properties and Bandgap Characteristics of InAs/GaAs Sub-monolayer Quantum Dot Investigated by Photoreflectance Spectroscopy-Reference-Cited by-同舟云学术

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Temperature-Dependent Optical Properties and Bandgap Characteristics of InAs/GaAs Sub-monolayer Quantum Dot Investigated by Photoreflectance Spectroscopy

Published:2019-01-31 Issue:1 Volume:28 Page:9-12
ISSN:2288-6559
Container-title:Applied Science and Convergence Technology
language:en
Short-container-title:Appl. Sci. Converg. Technol.

Author:

Kim Minseak,Lee Sang Jo,Jo Hyun Jun,Kim Geun-Hyeong,Kim Yeong Ho,Lee Sang Jun,Honsberg Christiana B.,Kim Jong Su

Publisher

The Korean Vacuum Society

Subject

Electrical and Electronic Engineering,Physical and Theoretical Chemistry,Condensed Matter Physics,Materials Science (miscellaneous)

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Impact of Built‐In Electric Field on the Emission Characteristics of InAs/GaAs Quantum Dot Laser Structure;physica status solidi (b);2021-05-20

2. GaAs/InGaAs heterostructure strain effects on self-assembly of InAs quantum dots;Physica E: Low-dimensional Systems and Nanostructures;2020-10

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