Reduction of Light Reflectance from InAlP by the Texture Formation Using Ultra-Thin Pt Layer-Reference-Cited by-同舟云学术

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Reduction of Light Reflectance from InAlP by the Texture Formation Using Ultra-Thin Pt Layer

Published:2013-05-30 Issue:3 Volume:22 Page:150-155
ISSN:1225-8822
Container-title:Journal of the Korean Vacuum Society
language:en
Short-container-title:Journal of the Korean Vacuum Society

Author:

Shin Hyun Wook,Shin Jae Cheol,Kim Hyo Jin,Kim Sung,Choe Jeong-Woo

Publisher

The Korean Vacuum Society

Subject

Electrical and Electronic Engineering,Physical and Theoretical Chemistry,Condensed Matter Physics,Materials Science (miscellaneous)

Link

http://ocean.kisti.re.kr/downfile/crosscheck/kvs/JAKO201317660996450.pdf

Reference15 articles.

1. Radiation response analysis of wide-gap p-AlInGaP for superhigh-efficiency space photovoltaics

2. Via-hole fabrication for III-V triple-junction solar cells

3. High-radiation-resistant InGaP, InGaAsP, and InGaAs solar cells for multijuction solar cells

4. High performance anti-reflection coatings for broadband multi-junction solar cells

5. Broadband and omnidirectional anti-reflection layer for III/V multi-junction solar cells

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A Study of Photo-voltaic Property in VO2Film;Journal of the Korean Vacuum Society;2013-07-30

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