Floating Gate Organic Memory Device with Tunneling Layer's Thickness-Reference-Cited by-同舟云学术

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Floating Gate Organic Memory Device with Tunneling Layer's Thickness

Published:2012-11-30 Issue:6 Volume:21 Page:354-361
ISSN:1225-8822
Container-title:Journal of the Korean Vacuum Society
language:en
Short-container-title:Journal of the Korean Vacuum Society

Author:

Kim H.S.,Lee B.J.,Shin P.K.

Publisher

The Korean Vacuum Society

Subject

Electrical and Electronic Engineering,Physical and Theoretical Chemistry,Condensed Matter Physics,Materials Science (miscellaneous)

Link

http://ocean.kisti.re.kr/downfile/crosscheck/kvs/JAKO201201052163424.pdf

Reference12 articles.

1. Graphene oxide nanosheets based organic field effect transistor for nonvolatile memory applications

2. Nonvolatile nano-floating gate memory devices based on pentacene semiconductors and organic tunneling insulator layers

3. Flexible Organic Transistor Memory Devices

4. Polymer electronic memories: Materials, devices and mechanisms

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Floating Gate Organic Memory Device with Plasma Polymerized Styrene Thin Film as the Memory Layer;Journal of the Korean Vacuum Society;2013-05-30

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