Improvement of Electrical Properties of Sn-Doped Indium Tin Oxide by In-Situ Annealing-Reference-Cited by-同舟云学术

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Improvement of Electrical Properties of Sn-Doped Indium Tin Oxide by In-Situ Annealing

Published:2022-11-15 Issue:6 Volume:31 Page:156-160
ISSN:2288-6559
Container-title:Applied Science and Convergence Technology
language:en
Short-container-title:Appl. Sci. Converg. Technol.

Author:

Lee Young Jae¹,Kim Jeha¹^ORCID

Affiliation:

1. Department of Energy Convergence Engineering, Cheongju University, Cheongju 28503, Republic of Korea

Publisher

The Korean Vacuum Society

Subject

Electrical and Electronic Engineering,Physical and Theoretical Chemistry,Condensed Matter Physics,Materials Science (miscellaneous),General Medicine

Link

http://pdf.medrang.co.kr/ASCT/2022/031/ASCT031-06-156.pdf

Reference23 articles.

1. Fabrication and characterization of multifunctional thin multi-layer films for transparent conducting oxides

2. Low-temperature conducting performance of transparent indium tin oxide/antimony tin oxide electrodes

3. d-electron-dependent transparent conducting oxide of V-doped ZnO thin films

4. Improvement of CIGS solar cells with high performance transparent conducting Ti-doped GaZnO thin films

5. The characterization of various TCOs and metal oxide layers for dye sensitized solar cells

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