Author:
Al-Jobory Alaa A.,Ahmed Wael, I.,A. Ibrahim J.
Abstract
In this work, the effects of x-value on electrical and optical properties was studied for the two dimensional (2D)GaAs1-xPxstructure by applying the density functional theory.We found that the gallium arsenide(GaAs) and gallium phosphide(GaP) monolayers are bound to each other, while the charge transfer between these two materialsleads to tuning the band gap value between 1.5 eV for GaAs to 2.24 eV for GaP. The density of state, band structure, and optical properties are investigated in this paper.
Publisher
University of Baghdad College of Science
Subject
General Biochemistry, Genetics and Molecular Biology,General Chemistry,General Computer Science
Cited by
2 articles.
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